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data sheet tle6284g data sheet 1 rev 2.4 2008-03-18 h-bridge driver ic features ? compatible to very low ohmic normal level input n-channel mosfets ? pwm ? dir - interface ? pwm frequency up to 50khz ? operates down to 7.5 v supply voltage ? low emc sensitivity and emission ? adjustable dead time with shoot through protection ? deactivation of dead time and shoot through protection possible ? short circuit protection for each mosfet can be disabled and adjusted ? driver undervoltage shut down ? reverse polarity protection for the driver ic ? fast disable function / inhibit for low quiescent current ? input with ttl characteristics ? 2 bit diagnosis ? thermal overload warning for driver ic ? shoot through protection ? integrated bootstrap diodes ? green product (rohs compliant) ? aec qualified application ? dedicated for dc-brush high current motor bridges in pwm control mode for 12, 24 and 42v powernet applica- tions. ? the input structure allows an easy control of a dc-brush motor general description h-bridge driver ic for mosfet power stages with multiple protection functions. the tle6184g is very similar to the tle6281g. the major difference is that the short circuit protection level of the tle6284g can be adjusted by external resistors or even disabled. the pin outs are different as well. block diagram input control dead time undervoltage short circuit detect. overtemp. warning or inh charge pump level shift floating ls driver 1 + v gs limitation ls1 + short circuit detect. + undervoltage linear regulator undervoltage hsx undervoltage lsx hs1 ls2 hs2 ls1 v s gnd dt/dis er1 bh1 bh2 sh1 gh1 dh1 gh2 dh2 gl1 sh2 gl2 dl1 dl2 floating ls driver 2 + v gs limitation ls2 + short circuit detect. + undervoltage floating hs driver 2 + v gs limitation hs2 + short circuit detect. + undervoltage floating hs driver 1 + v gs limitation hs1 + short circuit detect. + undervoltage scd scd scd scd short circuit detection pwm dir inh er2 t j > 170 o c typ. product summary turn on current i gxx(on) 850 ma turn off current i gxx(off) 580 ma supply voltage range v vs 7.5 ? 60 v gate voltage v gs 10 v temperature range t j -40...+150 c pg-dso-20 marking tle6284g
data sheet tle6284g data sheet 2 rev 2.4 2008-03-18 application block diagram r scdl1 tle6284g tle 4278g m v s = 12v c s 47f c s 1f r 10 ? c q 47f c d 47nf r q 47k ? r q 47k ? r dt 10k ? c b 220nf c b 220nf bh1 dh1 gh1 sh1 bh2 vs dh2 gh2 sh2 dl1 gl1 gl2 dl2 gnd er1 er2 inh dt / dis pwm dir wd r v cc watchdog reset q i c bcr192w d 68k ? r scdl2 r scdl3 r scdl4 r scdh3 r scdh4 r scdh2 r scdh1 r inh 220k ? this application block diagram shows one of the po ssibilities to use this driver ic. the volt- age divider networks accross the 4 mosfets (resistors r scdxx ) allow to increase the current limit threshold for short circuit protection. the r scdlx resistors also provide a charge path for the bootstrap capacitors. if r scdlx resistors are not used in the application, a 12k ohm resis- tor should be introduced between sh1 to gnd and sh2 to gnd.
data sheet tle6284g data sheet 3 rev 2.4 2008-03-18 pin symbol function 1 dt / dis a) set adjustable dead time by external resistor b) reset erx register c) disable output stages 2 er1 error flag for driver shut down 3 dir control input for spinning direction of the motor 4 pwm control input for pwm frequency and duty cycle 5 dl2 sense contact for short circuit detection low side 2 6 er2 warning flag temperature / distinguish if short cir- cuit or undervoltage lock out occured 7 gnd logic ground 8 vs voltage supply 9 dl1 sense contact for short circuit detection low side 1 10 inh sets complete device to sleep mode to achieve low quiescent currents 11 gl1 output to gate low side switch 1 12 sh1 connection to source high side switch 1 13 gh1 output to gate high side switch 1 14 bh1 bootstrap supply high side switch 1 15 dh1 sense contact for short circuit detection high side 1 16 dh2 sense contact for short circuit detection high side 2 17 bh2 bootstrap supply high side switch 2 18 gh2 output to gate high side switch 2 19 sh2 connection to source high side switch 2 20 gl2 output to gate low side switch 2 1 11 12 13 14 15 16 17 18 19 20 10 9 8 7 6 5 4 3 2 dt/dis gl1 sh1 gh1 dl1 vs bh1 gnd dh1 er2 dh2 bh2 dl2 pwm gh2 sh2 gl2 dir er1 inh tle6284g 1 9 8 7 6 5 4 3 2 10 20 18 17 16 15 14 13 12 11 19
data sheet tle6284g data sheet 4 rev 2.4 2008-03-18 maximum ratings at t j =-40?+150c unless speci fied otherwise limits values parameter symbol min max unit supply voltage 1 v s -4 60 v operating temperature range storage temperature range t j t stg -40 -55 150 150 c max. voltage range at pwm, dir, dt/dis -1 6v max. voltage range at erx -0.3 6v max. voltage range at inh v inh -0.6 60 v max. voltage range at bhx v bhx -0.3 90 v max. voltage range at dhx 2 v dhx -4 75 v max. voltage range at ghx 3 v ghx -7 86 v max. voltage range at shx 3 v shx -7 75 v max. voltage range at glx v glx -2 12 v max. voltage range at dlx v dlx -7 75 v max. voltage difference bhx ? shx v bhx -v shx -0.3 17 v max. voltage difference gxx ? sxx v gxx -v sxx -0.3 11 v power dissipation (dc) @ t a =125c / min.footprint p tot -- 0.33 w power dissipation (dc) @ t a =85c / min.footprint p tot -- 0.85 w electrostatic discharge voltage (human body model) according to mil std 883d, method 3015.7 and eos/esd assn. standard s5.1 ? 1993 v esd 4 -- 2 kv thermal resistance junction - ambient (minimal foot- print with thermal vias) r thja -- 75 k/w thermal resistance junction - ambient (6 cm 2 ) r thja -- 75 k/w functional range parameter and conditions symbol values unit at t j = ?40?+150 c, unless otherwise specified min max supply voltage v s 7.5 60 v operating temperature range t j -40 150 c max. voltage range at pwm, dir, dt/dis -0.3 5.5 v max. voltage range at erx -0.3 5.5 v max. voltage range at inh v inh -0.6 60 v max. voltage range at bhx v bhx -0.3 90 v max. voltage range at dhx 2 v dhx -4 75 v max. voltage range at ghx 3 v ghx -7 86 v max. voltage range at shx 3 v shx -7 75 v 1 with external resistor ( 10 ? ) and capacitor 2 the min value -4v is reduced to ?( v bhx - v shx ) in case of bootstrap voltages v bhx -v shx <4v 3 the min value -7v is reduced to ?(v bhx - v shx - 1v) in case of bootstrap voltages v bhx -v shx <8v 4 all test involving gxx pins v esd =1 kv!
data sheet tle6284g data sheet 5 rev 2.4 2008-03-18 max. voltage range at dlx 3 v dlx -7 75 v max. voltage range at glx v glx -2 12 v max. voltage difference bhx - shx v bhx -v shx -0.3 12 v max. voltage difference ghx ? shx v gxx -v sxx -0.3 11 v pwm frequency f pwm 0 50 khz minimum on time external lowside switch ? static con- dition @ 20 khz; q gate = 200nc t p(min) -- 2 s electrical characteristics parameter and conditions symbol values unit at t j = -40?150c, unless otherwise specified and supply voltage range v s = 7.5 ? 60v; f pwm = 20khz min typ max static characteristics low level output voltage (v gsxx ) @ i=10ma ? v ll -- 60 150 mv high level output voltage (v gsxx ) @ i=-10ma; vs 11.5v ? v hl 8 10 11 v high level output voltage (v gsxx ) @ i=-10ma; vs<11.5v ? v hl -- vs-1.5 -- v supply current at vs (device disabled) @ v bat = v s =42v r dt =400k ? i vs(dis)42v -- 4 8 ma quiescent current at vs (device inhibited) @ v bat = v s =14v r dt =400k ? r scdl1 +r scdl2 = r scdl3 +r scdl4 =12k ? i vs(inh)14v -- 0.6 1.5 ma quiescent current at vs (device inhibited) @ v bat = v s =42v r dt =400k ? r scdl1 +r scdl2 = r scdl3 +r scdl4 =12k ? i vs(inh)42v -- 0.6 1.5 ma supply current at vs @ v bat = v s =14v, f pwm = 20khz (outputs open) i vs(open)14v -- 7 15 ma supply current at vs @ v bat = v s =14v, f pwm = 50khz (outputs open) i vs(open)14v -- 7 15 ma supply current at vs @ v bat = v s =42v, f pwm = 20khz (outputs open) i vs(open)42v -- 7 15 ma low level input voltage v in(ll) -- -- 1.0 v high level input voltage v in(hl) 2.0 -- -- v input hysteresis ? v in 100 170 -- mv inhibit trip level v inh 1.3 2 3 v
data sheet tle6284g data sheet 6 rev 2.4 2008-03-18 dynamic characteristics (pls. see test circuit and timing diagram) turn on current @ v gxx ?v sxx = 0v; t j =25c @ v gxx ?v sxx = 4v; t j =125c @ c load =22nf ; r load = 0 ? i gxx(on) -- -- 850 700 -- -- ma turn off current @ v gxx ?v sxx = 10v; t j =25c @ v gxx ?v sxx = 4v; t j =125c @ c load = 22nf ; r load =0 ? i gxx(off) -- -- 580 300 -- -- ma dead time (adjustable) @ r dt = 1 k ? @ r dt = 10 k ? @ r dt = 50 k ? @ r dt = 200 k ? @ c load =10nf ; r load =1 ? t dt -- 0.05 0.40 -- 0.01 0.20 1.0 3.1 -- 0.38 2.50 -- s rise time @ c load =10nf ; r load =1 ? (20% to 80%) t rise -- 100 300 ns fall time @ c load =10nf ; r load =1 ? (80% to 20%) t fall -- 150 440 ns disable propagation time @ c load =10nf ; r load =1 ? t p(dis) 3.6 5 7 s reset time of diagnosis @ c load =10nf ; r load =1 ? t p(cl) 12 3.1s input propagation time (low side turns on, 0% to 10%) t p(iln) -- 250 500 ns input propagation time (low side turns off, 100% to 90%) t p(ilf) -- 110 500 ns input propagation time (high side turns on, 0% to 10%) t p(ihn) -- 200 500 ns input propagation time (high side turns off, 100% to 90%) t p(ihf) -- 130 500 ns input propagation time difference (all channels turn on) t p(diff) 20 50 70 ns input propagation time difference (all channels turn off) t p(diff) -- 25 50 ns input propagation time difference (one channel; low on ? high off) t p(diff) -- 120 180 ns input propagation time difference (one channel; high on ? low off) t p(diff) -- 100 180 ns input propagation time difference (all channels; low on ? high off) t p(diff) -- 120 180 ns input propagation time difference (all channels; high on ? low off) t p(diff) -- 100 180 ns
data sheet tle6284g data sheet 7 rev 2.4 2008-03-18 test circuit and timing diagram diagnosis and pr otection functions parameter and conditions symbol values unit at t j = -40?150c, unless otherwise specified and supply voltage range v s = 7.5 ? 60v; f pwm = 20khz min typ max overtemperature warning t j(ov) 150 170 190 c hysteresis for overtemperature warning ? t j(ov) -- 20 -- c short circuit protection filter time t scp(off) 6 9 12 s short circuit criteria (v ds of mosfets) for low sides for high sides v ds(scp) 0.5 0.45 0.75 0.75 1.0 1.05 v disable input level v dis 3.3 3.7 4.0 v disable input hysteresis ? v dis -- 180 -- mv error level @ 1.6ma i erx v erx -- -- 1.0 v under voltage lock out for highside output ? boot- strap voltage v bhx (uvlo) -- 3.7 4.6 v under voltage lock out for lowside output ? supply voltage v vs (uvlo) -- 4.8 5.9 v ghx slx glx shx x2 v ghx_c r load = 1 ohm c load = 10 nf pwm r load = 1 ohm c load = 10 nf v glx_c test conditions : junction temperature t j = -40 ? 150 o c supply voltage range vs = 7.5 ? 60v pwm frequency f pwm = 20 khz t t t pwm 50% 20% 80% 20% 80% t p(ihn) t p(iln) t p(ilf) t p(ihf) t rise t rise t fall t fall 10% 90% 90% 10% v ghx_c v glx_c
data sheet tle6284g data sheet 8 rev 2.4 2008-03-18 remarks: default status of input pins: to assure a defined status of the logic input pins in case of disconnection, these pins are internally secured by pull up / pull down current sources with approx. 20a. the high voltage proof input inh should be secured by an external pull down resistor close to the device. the following table shows the default status of the logic input pins. input pin default status pwm and dir low (= break in high side) dt/dis (active high) high definition: in this datasheet a duty cycle of 98% means that the glx pin is 2% of the pwm period in high condition. remark: please consider the influence of the dead time and the propagation time differ- ences for the input duty cycle functional description description of dead time pin / disable pin / reset this pin allows to adjust the internal generated dead time. the dead time protects the exter- nal highside and lowside mosfets in the same halfbridge against a lowohmic connection be- tween battery and gnd and the resulting cross current through these mosfets. the adjust- able dead time allows to minimize the power dissipation caused by the current flowing through the body diode during switching the halfbridge. in addition this pin allows to reset the diagnosis registers without shut down of any output stage as well as the possibility to shut down all outputs simultaneously. condition of dt/dis pin function 0 - 3.5v adjust dead time between 10ns and 3.1s a) reset of diagnosis register if dt/dis voltage is higher than 4v for a time between 3.1s and 3.6s > 4v b) shut down of output stages if dt/dis voltage is higher than 4v for a time above 7s (active pull down of gate volt- age) description of inhibit functionality in automotive applications which are permanently connected to the battery line, it is very im- portant to reduce the current consumption of the single devices. therefore the tle6284g offers an inhibit mode to put the device to sleep and assure very low quiescent currents. to deactivate the inhibit mode the inh pin has to be set to high. this can be done by connect- ing this pin to voltages between 3.3 and 60v without external protection. an inhibit mode means a complete reinitialisation of the device. description of diagnosis the two erx pins are open collector outputs and have to be pulled up with external pull up resistors to 5v. in normal conditions both erx signals are high. in case of shutdown of any
data sheet tle6284g data sheet 9 rev 2.4 2008-03-18 output stage the er1 is pulled down. this shut down can be caused by undervoltage or short circuit. in this condition er2 indicates the reason for the shut down. condition of er1 pin condition of er2 pin function 5v 5v no errors 5v 0v overtemperature warning of driver ic 0v 5v shut down of any output stage caused by short circuit 0v 0v shut down of any output stage caused by undervoltage recommended start-up procedure the following procedure is recommended whenever the driver ic is powered up: ? disable the driver ic via dt/dis pin ? wait until the bootstrap capacitors of high side mosfet c bx are charged (the waiting time depends on application conditions, e.g. c bx and r bx ) ? enable the driver ic via dt/dis pin ? start the operation by applying the desired pulse patterns. do not apply any pulse pat- terns to the pwm or dir pin, before the c bx capacitors are charged up. short circuit protection the current threshold limit to activate the s hort circuit protection function can be adjusted to larger values, it can not be adjusted to lower values. this can be done by external resistors to form voltage dividers across the ?sense element? (pls. see application block diagram on pg. 2), consisting of the drain-source-terminals, a fraction of the pcb trace and ? in some cases ? current sense resistors (used by the c not by the driver ic). the short circuit protection can be disabled for the high side mosfets by shorting dh1 with sh1 and dh2 with sh2 on the pcb; in this case the dhx pins may not be connected to the drains of the associated mosfets. to disable short circuit protection for the low side mosfets the dl1 and dl2 pin should be connected to the driver ics ground. shut down of the driver a shut down can be caused by undervoltage or short circuit. a short circuit will shut down only the affected mosfet until a reset of the error register by a disable of the driver occurs. a shut down due to short circuit will occur only when the short circuit criteria v ds(scp) is met for a duration equal to or longer than the short circuit filter time t scp(off) . yet, the exposure to or above v ds(scp) is not counted or accumulated. hence, repeti- tive short circuit conditions shorter than t scp(off) will not result in a shut down of the affected mosfet. an undervoltage shut down shuts only the affected output down. the affected output will auto restart after the undervoltage situation is over. operation at vs<12v if vs<11.5v the gate voltage will not reac h 10v. it will reach approx vs-1.5v, dependent on duty cyle, bootstrap capacitor, total gate charge of the external mosfet and switching fre- quency.
data sheet tle6284g data sheet 10 rev 2.4 2008-03-18 operation at different voltages for vs, dh1 and dh2 if dh1 and dh2 are used with a voltage higher than vs, a duty cycle of 100% can not be guaranteed. in this case the driver is acting like a normal driver ic based on the bootstrap principle. this means that after a maximum ?on? time of the highside switch of more than 1ms a refresh pulse to charge the bootstrap capacitor of about 1s is needed to avoid un- dervoltage lock out of this output stage. operation at extreme duty cycle: the integrated charge pump allows an operation at 100% duty cycle. the charge pump is strong enough to replace leakage currents during ?on?-phase of the highside switch. the gate charge for fast switching of the highside switches is supplied by the bootstrap capaci- tors. this means, that the bootstrap capacitor needs a minimum charging time of about 1s, if the highside switch is operated in pwm mode (e.g. with 20khz a maximum duty cycle of 96% can be reached). the exact value for the upper limit is given by the rc time formed by the impedance of the internal bootstrap diode and the capacitor formed by the external mos- fet (c mosfet =q gate / v gs ). the size of the bootstrap capacitor has to be adapted to the external mosfet the driver ic has to drive. usually the bootstrap capacitor is about 10-20 times big- ger than c mosfet . external components at the vs pin have to be considered, too. the charge pump is active when the highside switch is ?on? and the voltage level at the shx is higher than 4v. only under these conditions the bootstrap capacitor is charged by the charge pump.
data sheet tle6284g data sheet 11 rev 2.4 2008-03-18 estimation of power loss within the driver ic the power loss within the driver ic is strongly dependent on the use of the driver and the external components. nevertheless a rough estimation of the worst case power loss is pos- sible. worst case calculation is: p loss = (q gate *n*const* f pwm + i vs(open) )* v vs - p rgate with: p loss = power loss within the driver ic f pwm = switching freqency q gate = total gate charge of used mosfets at 10v v gs n = number of switched mosfets const = constant considering some leak age current in the driver (about 1.2) i vs(open) = current consumption of driver without connected mosfets during switching v vs = voltage at vs p rgate = power dissipation in the external gate resistors this value can be reduced dramatically by usage of external gate resistors. conditions : junction temperature t j = 25 o c number of switched mosfet n = 2 power dissipation in the external gate resistors p rgate = 0,2*p loss estimated power loss p loss within the driver ic for different supply voltages v s at q g = 100nc @ v gs = 10v 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0 102030405060 pwm frequency (khz) p loss (w) vs = 8v vs = 14v vs = 18v estimated power loss p loss within the driver ic for different gate charges q g at supply voltage v s = 14v 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0 102030405060 pwm frequency (khz) p loss (w) q g = 50nc q g = 100nc q g = 200nc
data sheet tle6284g data sheet 12 rev 2.4 2008-03-18 bhx ghx i gxx(on) i gxx(on) i gxx(off) i gxx(off) v pwm_hs i ghx i ghx 850 ma peak 580 ma peak test conditions : - turn on : v gs = 0v, t j = 25 o c - turn off : v gs = 10v, t j = 25 o c this figure represents the simplified internal circuit of one high side gate drive. the drive circuit of the low sides look similar. motor v s tle6284g high side driver this figure illustrates typical voltage and current waveforms of the high side gate drive; the associated waveforms of the low side drives look similar. logic + level shift + v gs limit + under voltage v pwm_hs c b dhx scd shx gate drive characteristics
data sheet tle6284g data sheet 13 rev 2.4 2008-03-18 truth table input conditions output driver ic output bridge dir pwm dt / dis uv ot sc gh 1 gl 1 gh 2 gl 2 er 1 er 2 out1 out2 0 1 <3.5v 0 0 0 1 0 0 1 5v 5v 1 0 0 0 <3.5v 0 0 0 1 0 1 0 5v 5v 1 1 1 1 <3.5v 0 0 0 0 1 1 0 5v 5v 0 1 1 0 <3.5v 0 0 0 1 0 1 0 5v 5v 1 1 0 1 <3.5v 1 0 0 b 0 0 b c d 1 a 0 a 0 0 <3.5v 1 0 0 b 0 b 0 c d 1 a 1 a 1 1 <3.5v 1 0 0 0 b b 0 c d 0 a 1 a 1 0 <3.5v 1 0 0 b 0 b 0 c d 1 a 1 a 0 1 <3.5v 0 1 0 1 0 0 1 5v 0v 1 0 0 0 <3.5v 0 1 0 1 0 1 0 5v 0v 1 1 1 1 <3.5v 0 1 0 0 1 1 0 5v 0v 0 1 1 0 <3.5v 0 1 0 1 0 1 0 5v 0v 1 1 0 1 <3.5v 0 0 1 e 0 0 e f 5v 1 a 0 a 0 0 <3.5v 0 0 1 e 0 e 0 f 5v 1 a 1 a 1 1 <3.5v 0 0 1 0 e e 0 f 5v 0 a 1 a 1 0 <3.5v 0 0 1 e 0 e 0 f 5v 1 a 1 a x x x x x x 0 0 0 0 5v 5v t t x x >4v x x x 0 0 0 0 5v 5v t t a) tristate when affected by undervoltage shut down or short circuit b) 0 when affected; 1 when not affected; self recovery c) 0v when output does not correspond to input patterns; 5v when output corresponds to input patterns d) is an output affected by undervoltage er2 is 0v e) 0 when affected? the outputs of the affected halfbridge are shut down and stay latched until reset; 1 when not affected f) 0v when output does not correspond to input patterns ? the outputs of the affected half- bridge are shut down and stay latched until reset; 5v when output corresponds to input patterns. t) tristate x) condition has no influence remark: to generate fast decay control mode, set pwm to 1 and send pwm-pattern to dir input.
data sheet tle6284g data sheet 14 rev 2.4 2008-03-18 pwm dir v gh1 v gh2 v gl1 v gl2 t t t t t t t i motor m vs m vs m vs m vs m vs m vs acceleration motor turns right motor stops motor turns left motor stops
data sheet tle6284g data sheet 15 rev 2.4 2008-03-18 package outlines (all dimensions in mm) 5 package pg-dso-20-45 green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). 5 more information about packages can be found at our internet page http://www.infineon.com/packages
data sheet tle6284g data sheet 16 rev 2.4 2008-03-18 tle6284g revision history: 2008-03-18 rev. 2.4 previous version: 2.3 green revision derived from tle6282g page subjects (major changes since last revision) 1 aec qualified and rohs compliant logos and features added. package picture updated. marking code added. 23 package outline updated. paragraph rohs complaint added. 25 legal disclaimer updated.
data sheet tle6284g data sheet 17 rev 2.4 2008-03-18 edition 2008-03-18 published by infineon technologies ag 81726 munich, germany ? 4/1/08 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or character- istics. with respect to any examples or hints given herei n, any typical values stated herein and/or any information regarding the application of the device, infineon technol ogies hereby disclaims any and all warranties and liabili- ties of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest in- fineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the fail- ure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other per- sons may be endangered.

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